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APTC60DDAM70T1G Dataheets PDF



Part Number APTC60DDAM70T1G
Manufacturers Microsemi
Logo Microsemi
Description Dual boost chopper Super Junction MOSFET Power Module
Datasheet APTC60DDAM70T1G DatasheetAPTC60DDAM70T1G Datasheet (PDF)

APTC60DDAM70T1G Dual boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • • • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Pins 3/4 must be shorted together Ben.

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APTC60DDAM70T1G Dual boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • • • • Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Pins 3/4 must be shorted together Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Each leg can be easily paralleled to achieve a single boost of twice the current capability • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID Parameter Drain - Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C Max ratings 600 39 29 160 ±20 70 250 20 1 1800 Unit V A V mΩ W A mJ August, 2009 1–7 APTC60DDAM70T1G – Rev 1 IDM Pulsed Drain current VGS Gate - Source Voltage RDSon Drain - Source ON Resistance P Maximum Power Dissipation D www.DataSheet4U.com IAR Avalanche current (repetitive and non repetitive) EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTC60DDAM70T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0V 3 Max 25 250 70 3.9 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A RG = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 670 980 1096 1206 µJ µJ ns nC Max Unit nF Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C IF = 30A IF = 60A IF = 30A Tj = 125°C Tj = 25°C IF = 30A VR = 400V di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Min 600 Typ Max 25 500 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V 30 1.8 2.2 1.5 25 160 35 480 2.2 V August, 2009 2–7 APTC60DDAM70T1G – Rev 1 trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC www.DataSheet4U.com www.microsemi.com APTC60DDAM70T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.5 1.2 150 125 100 4.7 80 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R25 ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜ ⎜T − T ⎟ ⎟⎥ ⎝ 25 ⎠⎦ ⎣ T: Thermistor temperature Min Typ 50 5 3952 4 Max Unit kΩ % K % SP1 Package outline (dimensions in mm) www.DataSheet4U.com See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC60DDAM70T1G – Rev 1 August, 2009 APTC60DDAM70T1G Typical CoolMOS Performance Curve 0.6 Thermal Impedance (°C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 6.5V 6V 5.5V Transfert Characteristics 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0 TJ=125°C TJ=25°C VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 160 120 80 VGS=15&10V 5V 40 0 0 5 10 15 4.5V 4V 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1 1.05 1 0.9.


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