DMP2240UDM

DMP2240UDM DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Dual P-Channel MOSFET Low On-Resistance 150 mΩ @ VGS = -4.5V 200 mΩ @ VGS = -2.5V 240 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Mechanical Data Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.015 grams (approximate) SOT-26 D1 S1 D2 D1 6 5 S1 4 D2 G1 1 S2 2 G2 3 G1 S2 G2 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current @TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM Value -20 ±12 -2.0 -1.5 -7 Units V V A A Characteristic Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. Symbol PD RθJA TJ, TSTG Value 600 208 -65 to +150 Units mW °C/W °C...