DMC2004DWK
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• • • • • • • • • • Low On-Resistance L...
DMC2004DWK
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3)
Mechanical Data
SOT-363
NEW PRODUCT
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 7 Ordering & Date Code Information: See Page 7 Weight: 0.006 grams (approximate)
D1 G2 S2
Q1
Q2
ESD protected
TOP VIEW
S1
G1
D2
TOP VIEW Internal Schematic
Maximum Ratings N-CHANNEL – Q1
Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1)
@TA = 25°C unless otherwise specified Symbol VDSS VGSS Value 20 ±8 540 390 Unit V V mA
TA = 25°C TA = 85°C
ID
Maximum Ratings P-CHANNEL – Q2
Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1)
@TA = 25°C unless otherwise specified Symbol VDSS VGSS Value -20 ±8 -430 -310 Unit V V mA
TA = 25°C TA = 85°C
ID
Thermal Characteristics – Total Device
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Te...