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CHM8811JPT Dataheets PDF



Part Number CHM8811JPT
Manufacturers Chenmko Enterprise
Logo Chenmko Enterprise
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet CHM8811JPT DatasheetCHM8811JPT Datasheet (PDF)

CHENMKO ENTERPRISE CO.,LTD CHM8811JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 12.5 Ampere www.DataSheet4U.com FEATURE * Small flat package. (SO-8 ) SO-8 4.06 (0.160) 3.70 (0.146) 8 1 * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. CONSTRUCTION * N-Channel Enha.

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CHENMKO ENTERPRISE CO.,LTD CHM8811JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 12.5 Ampere www.DataSheet4U.com FEATURE * Small flat package. (SO-8 ) SO-8 4.06 (0.160) 3.70 (0.146) 8 1 * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. CONSTRUCTION * N-Channel Enhancement 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 D D D D 5 1 S S S G 4 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted CHM8811JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V ±20 12.5 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 50 2500 -55 to 150 -55 to 150 mW °C °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 °C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM8811JPT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1 +100 -100 V µA nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VGS=10V, ID=12A VGS=4.5V, ID=10A 1 8 11 14 3 10 13.5 V mΩ S Forward Transconductance VDS =15V, ID = 12A SWITCHING CHARACTERISTICS (Note 4) Qg Q gs Q tr t off tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=12A VGS=5V V DD= 15V I D = 1.0A , VGS = 10 V RGEN= 6 Ω 28.7 8.5 8.7 18 9 73 15 37.3 nC t on 35 16 135 30 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS V SD Drain-Source Diode Forward Current (Note 1) (Note 2) 2.3 1.1 A V Drain-Source Diode Forward Voltage I S = 2.3A , VGS = 0 V www.DataSheet4U.com .


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