Document
CHENMKO ENTERPRISE CO.,LTD
CHM8811JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CURRENT 12.5 Ampere
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FEATURE
* Small flat package. (SO-8 )
SO-8
4.06 (0.160) 3.70 (0.146)
8 1
* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired.
CONSTRUCTION
* N-Channel Enhancement
5.00 (0.197) 4.69 (0.185)
4 5
.51 (0.020) .10 (0.012) 1.27 (0.05)BSC
1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)
.25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)
CIRCUIT
8
D D
D
D
5
1
S S
S
G
4
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
CHM8811JPT
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
30
V V
±20
12.5
ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
(Note 3)
A 50 2500 -55 to 150 -55 to 150 mW °C °C
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 °C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM8811JPT )
Electrical Characteristics T
Symbol Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
30 1 +100 -100
V µA nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA VGS=10V, ID=12A VGS=4.5V, ID=10A
1 8 11 14
3 10 13.5
V mΩ S
Forward Transconductance
VDS =15V, ID = 12A
SWITCHING CHARACTERISTICS (Note 4)
Qg Q gs Q tr t off tf
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=15V, ID=12A VGS=5V V DD= 15V I D = 1.0A , VGS = 10 V RGEN= 6 Ω
28.7 8.5 8.7 18 9 73 15
37.3 nC
t on
35 16 135 30 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS V SD
Drain-Source Diode Forward Current
(Note 1) (Note 2)
2.3 1.1
A V
Drain-Source Diode Forward Voltage I S = 2.3A , VGS = 0 V
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