Document
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CHM8207JPT
CURRENT 6 Ampere
FEATURE
* Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability.
1
SO-8
4.06 (0.160) 3.70 (0.146)
8
CONSTRUCTION
* N-Channel Enhancement
5.00 (0.197) 4.69 (0.185)
4 5
.51 (0.020) .10 (0.012) 1.27 (0.05)BSC
1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)
.25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)
CIRCUIT
D1 D1 D2 D2 8 5
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4 1 S1 G1 S2 G2
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
CHM8207JPT
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
20
V V
±12
6
ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
(Note 3)
A 24 2000 -55 to 150 -55 to 150 mW °C °C
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W
2008-01
RATING CHARACTERISTIC ( CHM8207JPT )
Electrical Characteristics T
Symbol Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 µA VDS = 20 V, VGS = 0 V VGS = 10V,VDS = 0 V VGS = -10V, VDS = 0 V
20 1 +10 -10
V µA µA µA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A
0.5 17 23 7 16
1.5 20 30
V mΩ S
Forward Transconductance
VDS =10V, ID = 6A
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 8V, VGS = 0V, f = 1.0 MHz 950 450 135 pF
SWITCHING CHARACTERISTICS (Note 4)
Qg Q gs Q tr t off tf
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=10V, ID=6A VGS=4.5V V DD= 10V I D = 1.0A , VGS = 4.5 V RGEN= 6 Ω
15 3.4 1.2 20 20 72 20
20 nC
t on
40 40 130 40 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS V SD
Drain-Source Diode Forward Current
(Note 1) (Note 2)
1.7 1.2
A V
Drain-Source Diode Forward Voltage I S = 1.7A , VGS = 0 V
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RATING CHARACTERISTIC CURVES ( CHM8207JPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
20 25
Figure 2. Transfer Characteristics
V G S =4.5,3.5,2.5V
16
I D , DRAIN CURRENT (A)
12
I D , DRAIN CURRENT (A)
VG S =2 . 0 V
20.