Document
A Product Line of Diodes Incorporated
DMP4050SSS
40V P-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V(BR)DSS RDS(on) 50mΩ @ VGS= -10V -40V 79mΩ @ VGS= -4.5V ID TA = 25°C -6.0A -4.7A
Features and Benefits
• • • • Low on-resistance Fast switching speed “Green” component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data Description and Applications
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Motor control Backlighting DC-DC Converters Power management functions • • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate)
SO-8
D G
S
Top View Top View Equivalent Circuit
Ordering Information
Product DMP4050SSS-13
Note:
(Note 1) Marking P4050SS Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
www.DataSheet4U.com
P4050SS YY WW
= Manufacturer’s Marking P4050SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53)
DMP4050SSS
Document Number DS32108 Rev 1 - 2
1 of 8 www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of Diodes Incorporated
DMP4050SSS
ADVANCE INFORMATION
Maximum Ratings
Drain-Source voltage Gate-Source voltage Continuous Drain current
@TA = 25°C unless otherwise specified Symbol VDSS VGS ID IDM IS ISM Value -40 ±20 -6.0 -4.8 -4.4 -27.0 -4.0 -27.0 Unit V V A A A A
Characteristic (Note 2) (Note 4) TA = 70°C (Note 4) (Note 3) (Note 5) (Note 4) (Note 5)
VGS = 10V
Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode)
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range
Notes:
Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 6) RθJA RθJL TJ, TSTG
Value 1.56 12.5 2.8 22.5 80 44.5 35 -55 to 150
Unit W mW/°C
°C/W °C
2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t ≤ 10 sec. 5. Same as note (3), except the device is pulsed.