30V N-Channel MOSFET
A Product Line of Diodes Incorporated
DMN3730UFB
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on...
Description
A Product Line of Diodes Incorporated
DMN3730UFB
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2.5V ID TA = 25°C 0.9A 0.7A
Features and Benefits
0.5mm ultra low profile package for thin application 2 0.6mm package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Load switch Portable applications Power Management Functions
Mechanical Data
Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate)
Drain
DFN1006-3
Body Diode Gate
S D G
ESD PROTECTED TO 2kV
Bottom View
Gate Protection Diode
Source
Top View Internal Schematic
Equivalent Circuit
Ordering Information (Note 3)
Part Number DMN3730UFB-7
Notes:
Marking NE
Reel size (inches) 7
Tape width (mm) 8
Quantity per reel 3000
1. No pur...
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