DMG4812SSS

DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V ID max TA = +25°C 10.7A 9.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:  Low RDS(ON) - minimizes conduction losses  Low VSD - reducing the losses due to body diode conduction  Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses  Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-through or cross conduction currents at high frequencies  Avalanche rugged – IAR and EAR rated  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Applications  DC-DC Converters  Power management functions ESD PROTECTED Top View Mechanical Data  Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram Below  Weight: 0.072 grams (approximate) SD D SD S DG GD Top View Internal Schematic S Equivalent circuit Ordering Information (Note 4...