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DMA204A0

Panasonic Semiconductor

Silicon PNP epitaxial planar type Transistor

This product complies with the RoHS Directive (EU 2002/95/EC). DMA204A0 Silicon PNP epitaxial planar type For low frequ...


Panasonic Semiconductor

DMA204A0

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Description
This product complies with the RoHS Directive (EU 2002/95/EC). DMA204A0 Silicon PNP epitaxial planar type For low frequency amplification  Features  Package  Code Mini6-G4-B  Pin Name 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)  Low collector-emitter saturation voltage VCE(sat)  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Basic Part Number Dual DSA2401 (Individual) 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1)  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: C0  Internal Connection Unit V V V A A mW °C °C 1 (E1) 2 (B1) 3 (C2) (C1) 6 (B2) 5 (E2) 4  Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating –15 –10 –7 – 0.5 –1 300 150 –55 to +150 Tr1 Tr2  Electrical Characteristics Ta = 25°C±3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Base-emitter saturation voltage * Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = –10 µA, IE = 0 IC = –1 mA, IB = 0 IE = ...




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