Diode
This product complies with the RoHS Directive (EU 2002/95/EC).
DB21413
Silicon epitaxial planar type
For rectification ...
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
DB21413
Silicon epitaxial planar type
For rectification Features Package
Code SMini2-F4-B Pin Name 1: Cathode 2: Anode
Forward current (Average) IF(AV) = 2 A rectification is possible Low forward voltage VF and small reverse current IR Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: 4N
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Forward current (Average) *1 Non-repetitive peak forward surge current *2 Junction temperature Storage temperature Symbol VR IF(AV) IFSM Tj Tstg Rating 40 2 30 125 –55 to +125 Unit V A A °C °C
Note) *1: Mounted on an alumina PC board (Board: 50 mm × 50 mm) *2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF1 IR Ct trr IF = 2.0 A VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 × IR , RL = 100 Ω Conditions Min Typ 0.46 25 43 12 Max 0.53 150 Unit V µA pF ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating ...
Similar Datasheet
- DB21413 Diode - Panasonic Semiconductor