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DB21413

Panasonic Semiconductor

Diode

This product complies with the RoHS Directive (EU 2002/95/EC). DB21413 Silicon epitaxial planar type For rectification ...


Panasonic Semiconductor

DB21413

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Description
This product complies with the RoHS Directive (EU 2002/95/EC). DB21413 Silicon epitaxial planar type For rectification  Features  Package  Code SMini2-F4-B  Pin Name 1: Cathode 2: Anode  Forward current (Average) IF(AV) = 2 A rectification is possible  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: 4N  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Forward current (Average) *1 Non-repetitive peak forward surge current *2 Junction temperature Storage temperature Symbol VR IF(AV) IFSM Tj Tstg Rating 40 2 30 125 –55 to +125 Unit V A A °C °C Note) *1: Mounted on an alumina PC board (Board: 50 mm × 50 mm) *2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF1 IR Ct trr IF = 2.0 A VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 × IR , RL = 100 Ω Conditions Min Typ 0.46 25 43 12 Max 0.53 150 Unit V µA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating ...




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