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DA2JF81

Panasonic Semiconductor

Diode

This product complies with the RoHS Directive (EU 2002/95/EC). DA2JF81 Silicon epitaxial planar type For high speed swi...


Panasonic Semiconductor

DA2JF81

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Description
This product complies with the RoHS Directive (EU 2002/95/EC). DA2JF81 Silicon epitaxial planar type For high speed switching circuits  Features  Package  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Small reverse current IR  High repetitive peak reverse voltage VRRM  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Marking Symbol: 5A  Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Forward current Non-repetitive peak forward surge current *1, 2 Junction temperature Storage temperature Symbol VRRM VRSM IF IFSM Tj Tstg Rating 800 800 200 1 –40 to +150 –40 to +150 Unit V V mA A °C °C Note) *1: Mounted on an alumina PC board *2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF IRRM1 IRRM2 Ct trr IF = 200 mA VRRM = 400 V VRRM = 800 V VR = 0 V, f = 1 MHz IF = 100 mA, IR = 200 mA, Irr = 0.25 × IR 0.6 10 45 Conditions Min Typ Max 2.5 1 10 Unit V mA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage o...




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