16.2-16.4GHz 4W Internally Matched Power FET
Excelics
PRELIMINARY DATA SHEET
EIA1616-4P
16.2-16.4GHz, 4W Internally Matched Power FET
• • • • • 16.2-16.4GHz BANDWI...
Description
Excelics
PRELIMINARY DATA SHEET
EIA1616-4P
16.2-16.4GHz, 4W Internally Matched Power FET
16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 25% TYPICAL) +36dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1616-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=16.2-16.4GHz MIN 35 6 TYP 36 7 25 1760 f=16.2-16.4GHz 2200 2880 3000 -1.0 -13 -15 4.5
o
MAX
UNIT dBm dB % mA dBm
P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth
Power Added Efficiency at 1dB compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss
rd
Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=48mA
3400
mA mS
-2.5
V V C/W
Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Ids Igsf Pin PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 360mA 35dBm 175oC -65/175oC 30W 8V -3V 3120mA 60mA @ 3dB Compression 150oC -65/150oC 25W CONTINUOUS2
www.DataSheet4U.com Tch
Tstg Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding an...
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