14.0-15.35GHz 8W Internally Matched Power FET
Excelics
• • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 20% TYPICAL) +39dBm TY...
Description
Excelics
14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 20% TYPICAL) +39dBm TYPICAL P1dB OUTPUT POWER 6dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE
EIA1415A-8P
Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 8W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1415-8P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=14.0-15.35GHz MIN 38 5.0 TYP 39 6.0 20 3520 46 4400 5760 6000 -1.0 -13 -15 2.3
o
MAX
UNIT dBm dB % mA dBm
P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth
Power Added Efficiency at 1dB compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss
rd
f=14.0-15.35GHz
Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=48mA
6800
mA mS
-2.5
V V C/W
Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg www.DataSheet4U.com Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 720mA 38dBm 175oC -65/175oC 60W 8V -3V 6240mA 120mA @ 3dB Compression 150oC -65/150oC 50W CONTINUOUS2
Note: 1. Exceeding any of the a...
Similar Datasheet