EIA1415-5

EIA1415-5 UPDATED 11/17/2006 14.40-15.35GHz 5-Watt Internally Matched Power FET FEATURES .060 MIN. Excelics EIA1415-5 YYWW SN .094 .382 .060 MIN. 14.40– 15.35GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .650±.008 .512 GATE .319 DRAIN .022 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f =14.40-5.35GHz VDS = 8 V, IDSQ ≈ 1400mA Gain at 1dB Compression f =14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1400mA Gain Flatness f =14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1400mA Power Added Efficiency at 1dB Compression f =14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1400mA Drain Current at 1dB Compression f =14.40-15.35GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 1 Caution! ESD sensitive device. MIN 35.5 6.0 TYP 36.5 7.0 ±0.6 33 1700 2880 -1.0 5.5 2000 3600 -2.5 6.0 o MAX UNITS dBm dB dB % mA mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 29 mA Note: 1) Tested with 100 Ohm gate resistor. 2) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 VDS VGS Igf Igr Pin Tch Tstg www.DataSheet4U.com Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Chann...