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EIA1111-2

Excelics Semiconductor
Part Number EIA1111-2
Manufacturer Excelics Semiconductor
Description 11.0-11.5 GHz 2-Watt Internally Matched Power FET
Published Feb 17, 2011
Detailed Description EIA1111-2 UPDATED 02/17/2006 11.0-11.5 GHz 2-Watt Internally Matched Power FET .060 MIN. Excelics EIA1111-2 .060 MIN...
Datasheet PDF File EIA1111-2 PDF File

EIA1111-2
EIA1111-2

Overview
EIA1111-2 UPDATED 02/17/2006 11.
0-11.
5 GHz 2-Watt Internally Matched Power FET .
060 MIN.
Excelics EIA1111-2 .
060 MIN.
FEATURES • • • • • • 11.
0– 11.
5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.
0 dBm Output Power at 1dB Compression 11.
0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Hermetic Metal Flange Package .
650±.
008 .
512 GATE .
319 DRAIN YYWW SN .
094 .
382 .
022 .
04 .
004 .
070 ±.
008 .
129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.
0-11.
5GHz VDS = 8 V, IDSQ ≈ 800mA Gain at 1dB Compression f = 11.
0-11.
5GHz VDS = 8 V, IDSQ ≈...


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