EIB1011-4P

Excelics 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-4P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1011-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=10.7-11.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=24mA -13 2200 rd EIB1011-4P MAX MIN 35 7 TYP 35.5 8 MAX UNIT dBm dB MIN 35.5 8 TYP 36.5 9 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 30 1760 43 2880 3000 -1.0 -15 4.5 -2.5 3400 2200 25 1700 49* 2720 1400 -2.0 -15 4.5 o % mA dBm 3400 mA mS -3.5 V V C/W Drain Breakdown Voltage Igd=9.6mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical –45dBc IM3 at Pout=26dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch www.DataSheet4U.com Tstg Pt PARAMETERS Drain-Source Voltage Gate-Sou...