IPB031NE7N3 G
OptiMOSTM3 Power-Transistor
Features Optimized technology for synchronous rectification Ideal for high frequency switching and DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1...
