GaAlAs T-1 Standard 3 Infrared Emitting Diode
LTE-4206/LTE-4206C/LTE-4216/LTE-4216C
Features
Selected to specific on-lin...
GaAlAs T-1 Standard 3 Infrared Emitting Diode
LTE-4206/LTE-4206C/LTE-4216/LTE-4216C
Features
Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of photo
transistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes.
Package Dimensions
Description
The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-4206 series provides a broad range of intensity selection. Suffix C-smoke color lens.
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25
Parameter
Power Dissipation Peak forward Current (300pps, 10 Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm (.063 in.) from body] s pulse)
Maximum Rating
90 1 60 5 -40 -55 260 to +85 to +100 for 5 Seconds
Unit
mW A mA V
Electrical Optical www.DataSheet4U.com
Characteristics at Ta=25
Symbol
Ee Ie Peak VF IR 2 1/2 20
Parameter
*Aperture Radiant Incidence Radiant Intensity Peak Emission Wavelength Spectral Line Half-Width Fo...