NTTFS4823N

NTTFS4823N Power MOSFET 30 V, 50 A, Single N−Channel, m8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications DC−DC Converters High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 12.6 A TA = 85°C 9.1 TA = 25°C PD 2.1 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 17.5 A TA = 85°C 12.6 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TC = 25°C TC = 85°C Power Dissipation RqJA (Note 2) TC = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt PD 4.0 W ID 7.1 A 5.1 PD 0.66 W ID 50 A 36 PD 32.9 W IDM TJ, Tstg IS dV/dt 150 A −55 to °C +150 33 A 6 V/ns Single Pulse Drain−to−Source Avalanche Energy EAS (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 25 Apk, L = 0.1 mH, RG = 25 W) 31 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings...