NUS5531MT

NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and optimizing charging performance in battery−powered portable electronics. Features V(BR)DSS −12 V http://onsemi.com MOSFET RDS(on) TYP 32 mW @ −4.5 V 44 mW @ −2.5 V ID MAX −6.2 A Low Vce(sat) PNP (Wall/USB) VCEO MAX −20 V VEBO MAX −7.0 V IC MAX −2.0 A High Performance Power MOSFET Single Low Vce(sat) Transistor as Charging Power Mux 3.0x3.0x0.8 mm WDFN Package Independent Pin−out Provides Circuit Flexibility Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device 8 1 WDFN8 CASE 506BC MARKING DIAGRAM 1 5531 AYWW G G Applications Main Switch and Battery Charging Mux for Portable Electronics Optimized for Commercial PMUs from Top Suppliers (See Figure 2) 5531 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Emitter 1 8 Base PIN ASSIGNMENT Emitter 2 7 N/C Base NC Collector 3 6 Gate GATE Drain Source 4 (Top View) 5 Drain 8 7 6 5 9 10 Collector 1 2 3 4 Emitter Emitter Collector Source Drain (Bottom View) Figure 1. Simple Schematic ORDERING INFORMATION Device NUS5531MTR2G Package WDFN8 (Pb−Free) Shipping† 3000/Tape & Reel www.DataSheet4U.com †For information on tape an...