Power MOSFET
NTD5802N Power MOSFET
Features
40 V, Single N−Channel, 101 A DPAK
• • • • • • •
Low RDS(on) to Minimize Conduction Loss...
Description
NTD5802N Power MOSFET
Features
40 V, Single N−Channel, 101 A DPAK
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified 100% Avalanche Tested These are Pb−Free Devices
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS 40 V RDS(on) 4.4 mW @ 10 V 7.8 mW @ 5.0 V D ID 101 A 50 A
Applications
CPU Power Delivery DC−DC Converters Motor Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Continuous Drain Current (RqJA) (Note 1) Power Dissipation (RqJA) (Note 1) Pulsed Drain Current tp=10ms Current Limited by Package TC = 25°C TC = 85°C TC = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, Tstg IS dV/dt EAS PD ID Symbol VDSS VGS ID Value 40 "20 101 78 93.75 16.4 12.7 2.5 300 45 − 55 to 175 50 6.0 240 W A A °C A V/ns mJ W A Unit V V A
G S
N−Channel
4 1 2
3
CASE 369C DPAK (Bent Lead) STYLE 2
MARKING DIAGRAMS & PIN ASSIGNMENT
4 Drain YWW 58 02NG 2 1 Drain 3 Gate Source Y WW 5802N G = Year = Work Week = Device Code = Pb−Free Package
Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VGS = 10 V, L = 0.3 mH, IL(pk) = 40 A, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ fr...
Similar Datasheet