NTLGF3402P
MOSFET – Power, P-Channel, Schottky Diode, Schotty Barrier Diode, FETKY, DFN6
-20 V, -3.9 A, 2.0 A
Features...
NTLGF3402P
MOSFET – Power, P-Channel,
Schottky Diode, Schotty Barrier Diode, FETKY, DFN6
-20 V, -3.9 A, 2.0 A
Features
Flat Lead 6 Terminal Package 3x3x1 mm Enhanced Thermal Characteristics Low VF and Low Leakage
Schottky Diode Reduced Gate Charge to Improve Switching Response This is a Pb−Free Device
Applications
Buck Converter High Side DC−DC Conversion Circuits Power Management in Portable, HDD and Computing
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady TA = 25°C
ID
State TA = 85°C
t ≤ 10 s TA = 25°C
Steady
PD
State TA = 25°C
t ≤ 10 s
−2.7
A
−2.0
−3.9
1.6
W
3.0
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
TA = 25°C
ID
Steady TA = 85°C
State
TA = 25°C
PD
−2.3
A
−1.7
1.14
W
Pulsed Drain Current
tp = 10 ms
IDM
11
A
Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
1.1
A
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad ...
