NTMD4820N

NTMD4820N Power MOSFET Features 30 V, 8 A, Dual N-Channel, SOIC-8 www.DataSheet4U.com ăLow RDS(on) to Minimize Conduction Losses ăLow Capacitance to Minimize Driver Losses ăOptimized Gate Charge to Minimize Switching Losses ăDual SOIC-8 Surface Mount Package Saves Board Space Applications http://onsemi.com V(BR)DSS 30 V RDS(on) Max 20 mW @ 10 V 27 mW @ 4.5 V ID Max 8A ăDisk Drives ăDC-DC Converters ăPrinters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 10 s (Note 1) Power Dissipation RqJA t < 10 s (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 6.4 5.1 1.28 4.9 3.9 0.75 8.0 6.4 2.0 32 -55 to +150 1.7 60.5 W A °C A mJ W A 8 W Unit V V A N-Channel D G S A MARKING DIAGRAM & PIN ASSIGNMENT D1 D1 D2 D2 8 SOIC-8 CASE 751 STYLE 11 1 S1 G1 S2 G2 1 4820N AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy TJ = 25C, VDD = 30 V, VGS = 10 V, IL = 11 Apk, L = 1.0 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4820N A Y WW G = Device Code = Assembly Location = Y...