NTMFS4709N

NTMFS4709N Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL www.DataSheet4U.com Features ăLow RDS(on) to Minimize Conduction Losses ăLow Capacitance to Minimize Driver Losses ăOptimized Gate Charge to Minimize Switching Losses ăThese are Pb-Free Devices Applications http://onsemi.com V(BR)DSS 30 V RDS(on) Typ 2.85 mW @ 10 V 4.0 mW @ 4.5 V ID Max 94 A ăVCORE Applications ăDC-DC Converters ăLow Side Switching MAXIMUM RATINGS (TJ=25°C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Cur‐ rent Current limited by package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source Single Pulse Drain-to-Source Avalanche Energy TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 30 Apk, L = 1.0 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 18 13 2.35 11 8.0 0.91 94 68 62.5 140 140 -55 to +150 62.5 10 450 W A A °C A V/ns mJ W A W A Unit V V A N-Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT D 1 SOIC-8 FLAT LEAD CASE 488AA STYLE 1 4709N A Y WW G S S S ...