NTMS4807N Power MOSFET
Features
30 V, 14.8 A, N-Channel, SO-8
ăLow RDS(on) to Minimize Conduction Losses ăLow Capacitance to Minimize Driver Losses ăOptimized Gate Charge to Minimize Switching Losses ăThis is a Pb-Free Device
Applications
V(BR)DSS 30 V 7.5 mW @ 4.5 V
www.DataSheet4U.com
http://onsemi.com
RDS(ON) MAX 6.1 mW @ 10 V 14.8 A ID MAX
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