NTMS4816N

NTMS4816N, NVMS4816N Power MOSFET 30 V, 11 A, N−Channel, SO−8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVMS4816N These Devices are Pb−Free and are RoHS Compliant Applications Disk Drives DC−DC Converters Printers MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Steady State Power Dissipation (Note 1) RqJA Steady State TA = 25°C TA = 70°C TA = 25°C VDSS VGS ID PD 30 ±20 9.0 7.2 1.37 Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 70°C ID 6.8 5.4 Power Dissipation (Note 2) RqJA TA = 25°C PD 0.78 Continuous Drain C(Nuortreen1t)RqJA, t v 10 s Steady State TA = 25°C TA = 70°C ID 11 8.8 Power Dissipation RqJA, t v 10 s(Note 1) Steady State TA = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 12.5 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) PD 2.04 IDM 33 TTsJtg, −55 to 150 IS 2.7 EAS 78 TL 260 Unit V V A W A W A W A °C A mJ °C THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Ambient – Steady State (Note 1) RqJA 91.5 °C/W ...