NTMS4N01R2

NTMS4N01R2 Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 Package Features High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency Miniature SO−8 Surface Mount Package Saving Board Space; Mounting Information for the SO−8 Package is Provided IDSS Specified at Elevated Temperature Drain−to−Source Avalanche Energy Specified Diode Exhibits High Speed, Soft Recovery Pb−Free Package is Available Applications Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 mW) Gate−to−Source Voltage − Continuous Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Thermal Resistance, Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 7.5 Apk, L = 6 mH, RG = 25 W) Maximu...