K3N7U4000B

K3N7V(U)4000B-DC 64M-Bit (4Mx16) CMOS MASK ROM FEATURES Switchable organization 4,194,304 x 16(word mode) Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@C L=100pF 3.0V Operation : 120ns(Max.)@CL=100pF Supply voltage : single +3.3V/ single +3.0V Current consumption Operating : 40mA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package -. K3N7V(U)4000B-DC: 42-DIP-600 CMOS MASK ROM www.DataSheet4U.com GENERAL DESCRIPTION The K3N7V(U)4000B-DC is a fully static mask programmable ROM organized 4,194,304x16 bit. It is fabricated using silicongate CMOS process technology. This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N7V(U)4000B-DC is packaged in a 42-DIP FUNCTIONAL BLOCK DIAGRAM A21 . . . . . . . . A0 PIN CONFIGURATION X BUFFERS AND DECODER MEMORY CELL MATRIX (4,194,304x16) A18 A17 A7 A6 1 2 3 4 5 6 7 8 9 42 A19 41 A8 40 A9 39 A10 38 A11 37 A12 36 A13 35 A14 34 A15 Y BUFFERS AND DECODER A5 SENSE AMP. BUFFERS A4 A3 A2 A1 . . . A0 10 A21 11 DIP 33 A16 32 A20 31 VSS 30 Q15 29 Q7 28 Q14 27 Q6 26 Q13 25 Q5 24 Q12 23 Q4 22 VCC OE CONTROL LOGIC Q0 Q15 VSS 12 OE 13 Q0 Q8 Q1 14 15 16 17 18 19 Pin Name A0 - A21 Q0 - Q15 OE VCC VSS Pin F...