BIC801M

BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier www.DataSheet4U.com ADE-208-705C (Z) 4th. Edition Nov. 1998 Features Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz) Low noise; NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. Marking is “AY–”. 2. BIC801M is individual type number of HITACHI BICMIC. BIC801M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 20 150 150 –55 to +150 Unit V V V mA mW °C °C www.DataSheet4U.com Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.5 7 22 1.6 0.6 — 23 Typ — — — — — 0.7 10 27 2.0 1.0 0.024 27 Max — — — +100 +100 1.0 13 32 2.3 1.4 0.05 — Unit V V V nA nA V mA mS pF pF pF dB Test Conditions I D = 200µA VG2S = 0,VG1 = open I G1 = +10µA VG2S = VDS = 0 I G2 = +10µA VG1S = VDS = 0 VG1S = +5V VG2S = VDS = 0 VG2S = +5V VG1S = VDS = 0 VDS = 5V...