ST 2N3905 / 2N3906
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. As complementary ty...
ST 2N3905 / 2N3906
PNP Silicon Epitaxial Planar
Transistor
for switching and amplifier applications. As complementary types the
NPN transistors 2N3903 and 2N3904 are recommended. On special request, these
transistors can be manufactured in different pin configurations.
www.DataSheet4U.com
1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS
Value 40 40 6 200 625 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/03/2007
ST 2N3905 / 2N3906
www.DataSheet4U.com
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 1 V, -IC = 0.1 mA at -VCE = 1 V, -IC = 1 mA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 1 V, -IC = 100 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Gain Bandwidth Prod...