ST2N3704

ST 2N3704 www.DataSheet4U.com NPN Silicon Epitaxial Planar Transistor for general purpose applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 50 30 5 600 625 150 -55 to +150 Unit V V V mA mW ℃ ℃ SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/04/2005 ST 2N3704 Characteristics at Tamb=25℃ Symbol DC Current Gain at VCE=2V, IC=50mA Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=100μA Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VBE=3V Output Capacitance at VCB=10V, f=1MHz Collector Emitter Saturation Voltage at IC=100mA, IB=5mA Base Emitter On Voltage at VCE=2V, IC=100mA Current Gain Bandwidth Product at VCE=2V, IC=50mA, f=20MHz fT 100 MHz *VBE(on) 0.5 1 V *VCE(sat) 0.6 V Cob 12 pF IEBO 100 nA ICBO 100 nA BVEBO 5 V *BVCEO 30 V BVCBO 50 V *hFE 100 300 Min. Typ. www.DataSheet4U.com Max. Unit * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on...