IDT08S60C

IDT08S60C www.DataSheet4U.com 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 5mA2) PG-TO220-2-2 Product Summary V DC Qc IF 600 19 8 V nC A thinQ! 2G Diode specially designed for fast switching applications like: CCM PFC Motor Drives Type IDT08S60C Package PG-TO220-2-2 Marking D08S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 8 12 59 32 264 17 600 VR=0…480V T C=25 °C 50 75 -55 ... 175 M3 and M3.5 screws page 1 60 A2s V V/ns W °C Ncm 2006-03-14 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg IDT08S60C www.DataSheet4U.com Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal...