DatasheetsPDF.com

A1942 Dataheets PDF



Part Number A1942
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SA1942
Datasheet A1942 DatasheetA1942 Datasheet (PDF)

2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type www.DataSheet4U.com 2SA1942 Power Amplifier Applications • • • High breakdown voltage: VCEO = −160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage.

  A1942   A1942



Document
2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type www.DataSheet4U.com 2SA1942 Power Amplifier Applications • • • High breakdown voltage: VCEO = −160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −160 −160 −5 −12 −1.2 120 150 −55 to 150 Unit V V V A A W JEDEC °C °C ― ― JEITA TOSHIBA 2-21F1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1942 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = −160 V, IE = 0 VEB = −5 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −1 A VCE = −5 V, IC = −6 A IC = −8 A, IB = −0.8 A VCE = −5 V, IC = −6 A VCE = −5 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −160 55 35 ― ― ― ― Typ. ― ― ― ― 80 −1.1 −1.0 30 320 www.DataSheet4U.com Max Unit μA μA V −5.0 −5.0 ― 160 ― −2.5 −1.5 ― ― V V MHz pF Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Marking Part No. (or abbreviation code) TOSHIBA 2SA1942 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1942 IC – VCE −10 −250 −8 −200 −150 Common emitter Tc = 25°C −100 −6 −50 −4 −40 −30 −2 −20 IB = −10 mA −2 −4 −6 −8 −10 −8 −10 IC – VBE www.DataSheet4U.com (A) Collector current IC Collector current IC (A) −6 −4 Tc = 100°C 25°C −2 −25°C Common emitter VCE = −5 V 0 0 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) −3 −1 1000 hFE – IC DC current gain hFE Tc = 100°C 100 Tc = 25°C Tc = −25°C Tc = 100°C −0.1 Tc = −25°C Tc = 25°C −0.01 −0.01 −0.1 −1 Common emitter IC/IB = 10 −10 −100 Common emitter VCE = −5 V 10 −0.01 −0.1 −1 −10 Collector current IC (A) Collector current IC (A) Safe Operating Area −50 −30 IC max (pulsed)* IC max (conti.


2N2822 A1942 B57964S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)