Document
2SA1942
TOSHIBA Transistor Silicon PNP Triple Diffused Type
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2SA1942
Power Amplifier Applications
• • • High breakdown voltage: VCEO = −160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −160 −160 −5 −12 −1.2 120 150 −55 to 150 Unit V V V A A W
JEDEC
°C °C
― ―
JEITA
TOSHIBA 2-21F1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2006-11-09
2SA1942
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = −160 V, IE = 0 VEB = −5 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −1 A VCE = −5 V, IC = −6 A IC = −8 A, IB = −0.8 A VCE = −5 V, IC = −6 A VCE = −5 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −160 55 35 ― ― ― ― Typ. ― ― ― ― 80 −1.1 −1.0 30 320
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Max Unit μA μA V −5.0 −5.0 ― 160 ― −2.5 −1.5 ― ― V V MHz pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
Part No. (or abbreviation code) TOSHIBA
2SA1942
Lot No.
JAPAN
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2006-11-09
2SA1942
IC – VCE
−10 −250 −8 −200 −150 Common emitter Tc = 25°C −100 −6 −50 −4 −40 −30 −2 −20 IB = −10 mA −2 −4 −6 −8 −10 −8 −10
IC – VBE
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(A)
Collector current IC
Collector current IC
(A)
−6
−4
Tc = 100°C 25°C
−2
−25°C Common emitter VCE = −5 V
0 0
0 0
−0.4
−0.8
−1.2
−1.6
−2.0
Collector-emitter voltage
VCE (V)
Base-emitter voltage
VBE (V)
VCE (sat) – IC
Collector-emitter saturation voltage VCE (sat) (V)
−3 −1 1000
hFE – IC
DC current gain hFE
Tc = 100°C 100 Tc = 25°C Tc = −25°C
Tc = 100°C −0.1 Tc = −25°C Tc = 25°C −0.01 −0.01 −0.1 −1 Common emitter IC/IB = 10 −10 −100
Common emitter VCE = −5 V 10 −0.01 −0.1 −1 −10
Collector current IC
(A)
Collector current IC
(A)
Safe Operating Area
−50 −30 IC max (pulsed)* IC max (conti.