EPA160B

Excelics DATA SHEET +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 40mA PER BIN RANGE www.DataSheet4U.com EPA160B High Efficiency Heterojunction Power FET 540 50 156 D D 48 370 100 40 S 95 G 50 S 120 G S ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=4.5mA Chip Thickness: 75 ± 13 microns All Dimensions In Microns MIN 29.0 9.0 TYP 31.0 31.0 10.5 5.5 45 MAX UNIT dBm dB % 290 320 480 500 -1.0 660 mA mS -2.5 V V V o Drain Breakdown Voltage Igd=1.6mA Source Breakdown Voltage Igs=1.6mA Thermal Resistance (Au-Sn Eutectic Attach) -11 -7 -15 -14 33 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -3V Vgs Drain Current Idss 435mA Ids Forward Gate Current 80mA 14mA Igsf Input Power 28dBm @3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 4.1W 3...