EPA160AV

Excelics EPA160A/EPA160AV www.DataSheet4U.com DATA SHEET High Efficiency Heterojunction Power FET +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA160AV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 40mA PER BIN RANGE O Chip Thickness: 75 ± 20 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN Output Power at 1dB Compression P1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression G1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression PAE Idss Gm Vp BVgd BVgs Rth Vds=8V, Ids=50% Idss f=12GHz 290 320 45 480 500 -1.0 -11 -7 -15 -14 30 -2.5 660 f=12GHz f=18GHz f=12GHz f=18GHz 9.5 29.0 : Via Hole No Via Hole For EPA160A EPA160AV MAX MIN 29.0 TYP 31.0 31.0 10.0 12.0 10.0 dB dBm MAX UNIT EPA160A TYP 31.0 31.0 11.5 8.5 46 290 320 480 500 -1.0 -11 -7 -15 -14 22 o % 660 mA mS -2.5 V V V C/W Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=4.5mA Drain Breakdown Voltage Igd=1.6mA Source Breakdown Voltage Igs=1.6mA Thermal Resistance (Au-Sn Eutectic Attach) O MAXIMUM RATINGS AT 25 C SYMBOLS PARAMETERS EPA160A ABSOLUTE1 CONTINUOUS2 8V -3V 475mA 14mA @ 3dB Compression 150oC o EPA160AV ABSOLUTE1 12V -8V Idss 80mA 28dBm 175oC o CONTINUOUS2 8V -3V 625mA 14mA @ 3...