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2SC4442

Part Number	2SC4442
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 31, 2011
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4442 DESCRIPTION · ·Collector-Base Breakdown Voltage- : ...
Datasheet	2SC4442 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4442 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.
) ·Wide Area of Safe Operation ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous Collect...

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