SVC364

Ordering number :EN4275A SVC364 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features · Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic mounting supported. · High capacitance ratio and high quality factor. · Cathodes separated in RF and OSC. · Tape reel packaging. · Surface mount type. Package Dimensions unit:mm 1214A [SVC364] 1:Anode1 2:Cathode2 3:Anode2 4:Anode3 5:Cathode2 6:Anode4 SANYO:MFP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Junction Temperature Storage Temperature Symbol VR Tj Tstg Conditions Ratings 16 125 –55 to +125 Unit V ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakdown Voltage Reverse Current (One diode) Interterminal Capacitance (Average) Symbol V(BR)R IR C1V C6V C8V Quality Factor Capacitance Ratio Matching Tolerance Q CR ∆Cm*2 IR=10µA VR=9V VR=1V, f=1MHz*1 VR=6V, f=1MHz VR=8V, f=1MHz VR=1V, f=1MHz C1V/C8V VR=1V to 8V, f=1MHz 20.5 200 17.5 24.5 ±2.5 % 428.0* 52.0 27.0 Conditions Ratings min 16 100 500.0* typ max Unit V nA pF pF pF Note)*1:1MHz signal:20mVrms. Note)*2:∆Cm= (CDn–CD3) / CD3×100 Note)*:The SVC364 is classified by C1V as follows: Electrical Connection Rank K L M C1V(pF) 428.0 to 456.5 447.5 to 478.0 468.5 to 500.0 A:Anode C:Cathode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKY...