KSH13009AF

KSH130 009AF KSH13009AF ◎ SEMIHOW REV.A0,Oct 2007 www.DataSheet.in KSH130 009AF KSH13009AF Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor 100 Watts Absolute Maximum Ratings CHARACTERISTICS Collector-Base Voltage Collector-Emitter Collector Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 700 400 9 12 24 6 50 150 -65~150 UNIT V V V A A A W ℃ ℃ TO-220F 1. Base 2. Collector 3. Emitter 12 3 Electrical Characteristics CHARACTERISTICS Collector-Emitter Sustaining Voltage Emitter Cut-off Current *DC Current Gain TC=25℃ unless otherwise noted SYMBOL VCEO(sus) IEBO hFE1 hFE2 VCE(sat) Test Condition IC=10mA, IB=0 VEB=9V,IC=0 VCE=5V,IC=5A VCE=5V,I , C=8A IC=5A,IB=1A IC=8A,IB=1.6A IC=12A,IB=3A IC=5A,IB=1A IC=8A,IB=1.6A VCB=10V, f=0.1MHz VCE=10V,IC=0.5A Vcc=125V, Ic=8A IB1=1.6A, IB2= -1.6A RL=15.6Ω 4 1.1 3 0.7 180 8 6 Min 400 1 40 30 1 1.5 3 1.2 1.6 V V V V V ㎊ ㎒ ㎲ ㎲ ㎲ Typ. Max Unit V ㎃ *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% VBE(sat) Cob fT ton tstg tF Note. R hFE1 Classific...