KSH13007F

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR KSH13007F ¨€ HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ª¡ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- 65~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation£¨ T c=25¡æ £©¡-¡-¡-¡-¡-¡-¡-¡40W VCBO ¡ª¡ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡700V VCEO¡ª¡ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡400V VEBO ¡ª¡ª Emitter-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡9V IC¡ª¡ªCollector Current £¨ DC£ © ¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡8A ICP ¡ª¡ªCollector Current £¨ Pulse£©¡-¡-¡-¡-¡-¡-¡¡-¡-¡-¡16A TO-220F 1¨D Base£¬ B 2¨D Collector£¬ C 3¨D Emitter, E IB¡ª¡ª Base Current¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡4A ¨€ µç²ÎÊý £¨ Ta=25¡æ £© Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO IEBO HFE Collector-Emitter Sustaining Voltage Emitter-Base Cut-off Current DC Current Gain 400 1 10 5 40 30 1 2 3 V mA IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A VCE(sat) Collector- Emitter Saturation Voltage V V V V V pF MHz IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=5A, IB1 =-IB2 =1A RL=50¦¸ VBE(sat) Base- Emitter Saturation Voltage 1.2 1.6 Cob fT tON tS tF Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 110 1.6 3 0.7 ¦Ì s ¦Ì s ¦Ì s hFE Classif...