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KSH13005W

SHANTOU HUASHAN

NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R KSH13005W █ HIGH VOLTAGE SWITCH MOD...



KSH13005W

SHANTOU HUASHAN


Octopart Stock #: O-688914

Findchips Stock #: 688914-F

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Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R KSH13005W █ HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…………………… 75W VCBO——Collector-Base Voltage…………………………… 700V VCEO——Collector-Emitter Voltage………………………… 400V VEBO —— Emitter-Base Voltage ……………………………… 9V IC——Collector Current (DC) ………………………………… 4A IC——Collector Current (Pulse) ……………………………… 8A IB——Base Current……………………………………………2A TO-263(D2PAK) 1―Base,B 2―Collector,C 3―Emitter, E █ (Ta=25℃) Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO IEBO HFE VCE(sat) Collector-Emitter Sustaining Voltage Emitter-Base Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage 400 1 10 8 40 40 0.5 0.6 1 V mA IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A V V V V V pF MHz μs μs μs IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=2A, IB1=-IB2=0.4A VBE(sat) Base- Emitter Saturation Voltage Cob fT tON tS tF Output Capacitance Current Gain-Bandwidth Product Turn On Time Storage Time Fall Time 4 65 1.2 1.6 0.8 4 0.9 hFE classification: H1 (10--16) H2 (14--21) H3 (19--26) H4 (24--31) H5 (29--40) www.DataSheet.in Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N ...




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