2SA0879

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −250 −200 −5 −70 −100 1 150 −55 to +150 Unit V V V mA mA W °C °C 1 2 3 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.45+0.2 –0.1 (1.27) 8.6±0.2 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCEO VEBO hFE VCE(sat) fT Cob Conditions IC = −100 µA, IB = 0 IE = −1 µA, IC = 0 VCE = −10 V, IC = −5 mA IC = −50 mA, IB = −5 mA VCB = −10 V, IE = 10 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 50 80 5 10 Min −200 −5 60 220 −1.5 Typ Max Unit V V  V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 60 to 150 R 100 to 220 Note) The part n...