ST 2SC1740
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdiv...
ST 2SC1740
NPN Silicon Epitaxial Planar
Transistor for switching and AF amplifier applications. The
transistor is subdivided into four groups Q, R, S and E. according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings
(Ta = 25? ) Symbol Value 60 50 5 150 300 150 -55 to +150 Unit V V V mA mW
O O
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC Ptot Tj TS
C C
G S P FORM A IS AVAILABLE
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ST 2SC1740
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Q R S E Collector Base Breakdown Voltage at IC=50µA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=50µA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, IC=2mA Output Capacitance at VCB=12V, f=1MHz COB 2 3.5 pF fT 180 MHz VCE(sat) 0.4 V IEBO 0.1 µA ICBO 0.1 µA V(BR)EBO 5 V V(BR)CEO 50 V V(BR)CBO 60 V hFE hFE hFE hFE 120 180 270 390 270 390 560 820 Min. Typ. Max. Unit
G S P FORM A IS AVAILABLE
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