IGBT
TYPICAL PERFORMANCE CURVES ®
APT20GN60BDQ1 APT20GN60BDQ1G*
APT20GN60BDQ1(G) 600V
*G Denotes RoHS Compliant, Pb Free T...
Description
TYPICAL PERFORMANCE CURVES ®
APT20GN60BDQ1 APT20GN60BDQ1G*
APT20GN60BDQ1(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
G C E
TO -2 47
600V Field Stop
Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT20GN60BDQ1(G) UNIT Volts
600 ±30 40 24 60 60A @ 600V 136 -55 to 175 300
Amps
@ TC = 175°C
Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C =...
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