Document
STD95N2LH5 STP95N2LH5, STU95N2LH5
N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET
Features
Type STD95N2LH5 STP95N2LH5 STU95N2LH5
■ ■ ■ ■
VDSS 25 V 25 V 25 V
RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω
ID
3
80 A 80 A 80 A
1
3 2 1
DPAK IPAK
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
3 1 2
TO-220
Application
■
Switching applications
Figure 1.
Internal schematic diagram
$ 4!" OR
Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit).
'
3
!-V
Table 1.
Device summary
Marking 95N2LH5 95N2LH5 95N2LH5 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube
Order codes STD95N2LH5 STP95N2LH5 STU95N2LH5
April 2010
Doc ID 13834 Rev 5
1/17
www.st.com 17
www.DataSheet.in
Contents
STD95N2LH5, STP95N2LH5, STU95N2LH5
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 13834 Rev 5
www.DataSheet.in
STD95N2LH5, STP95N2LH5, STU95N2LH5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID (1) ID IDM
(2)
Absolute maximum ratings
Value Parameter DPAK/IPAK Drain-source voltage (VGS=0) Gate-Source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 80 67 320 70 0.47 165 -55 to 175 380 80 25 ± 22 95 TO-220 V V A A A W W/°C mJ °C Unit
PTOT
(3)
EAS
Single pulse avalanche energy Operating junction temperature Storage temperature
Tj Tstg
1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, Id = 40 A, Vdd = 20 V
Table 3.
Symbol Rthj-case Rthj-amb Tj
Thermal resistance
Parameter Thermal resistance junction-case max Thermal resistance junction-case max Maximum lead temperature for soldering purpose Value 2.14 100 275 Unit °C/W °C/W °C
Doc ID 13834 Rev 5
3/17
www.DataSheet.in
Electrical characteristics
STD95N2LH5, STP95N2LH5, STU95N2LH5
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th)
Static
Parameter Drain-source breakdown Voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current.