STP3N150

STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages 23 1 TO-3PF TAB 3 2 TO-220 1 D(2, TAB) TAB 2 3 1 H2PAK-2 3 2 1 TO-247 D(TAB) G(1) G(1) Features Order codes VDS RDS(on) max. ID PTOT STFW3N150 63 W STH3N150-2 1500 V 9Ω STP3N150 2.5 A 140 W STW3N150 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications Switching applications S(3) (TO-3PF, TO-220 and TO-247) S(2, 3) (H2PAK-2) AM15557v1 Description These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150 DS5052 - Rev 12 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings 1 Electrical ratings Table 1. Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;...