STD2NK100Z

STD2NK100Z Datasheet N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS STD2NK100Z 1000 V 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected RDS(on) max. 8.5 Ω ID 1.85 A Applications Switching applications Description AM01476v1_tab This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD2NK100Z Product summary Order code STD2NK100Z Marking 2NK100Z Package DPAK Packing Tape and reel DS14345 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STD2NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source, human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width limit...