Document
STD26NF10
N-channel 100V - 0.033Ω - 25A - DPAK Low gate charge STripFET™ II Power MOSFET
Features
Type STD26NF10
■ ■ ■ ■
VDSS 100V
RDS(on) < 0.038Ω
ID 25A
Exceptional dv/dt capability Application oriented characterization 100% avalanche tested Application oriented characterization
DPAK
3 1
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is intended for any application with low gate charge drive requirements.
Internal schematic diagram
Applications
■
Switching application – Automotive
Order code
Part number STD26NF10 Marking D26NF10 Package DPAK Packaging Tape & reel
April 2007
Rev 1
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Contents
STD26NF10
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STD26NF10
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID(1) ID IDM
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Value 100 100 ± 20 25 21 100 100 0.67 13 480 -55 to 175 Max. operating junction temperature Unit V V V A A A W W/°C V/ns mJ °C
Ptot dv/dt(3) EAS
(4)
Peak diode recovery avalanche energy Single pulse avalanche energy Storage temperature
Tstg Tj
1. Current limited by package 2. Pulse width limited by safe operating area. 3. ISD ≤35A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX 4. Starting Tj = 25 °C, ID = 12.5A VDD = 50V
Table 2.
Rthj-case Rthj-amb TJ
Thermal data
Thermal resistance junction-case max Thermal resistance junction-to ambient max Maximum lead temperature for soldering purpose 1.5 100 300 °C/W °C/W °C
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Electrical characteristics
STD26NF10
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 3.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS =0 VDS = Max rating VDS = Max rating, TC = 125°C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10V, ID = 12.5A 2 3 0.033 Min. 100 1 10 ±100.