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STD26NF10 Dataheets PDF



Part Number STD26NF10
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STD26NF10 DatasheetSTD26NF10 Datasheet (PDF)

STD26NF10 N-channel 100V - 0.033Ω - 25A - DPAK Low gate charge STripFET™ II Power MOSFET Features Type STD26NF10 ■ ■ ■ ■ VDSS 100V RDS(on) < 0.038Ω ID 25A Exceptional dv/dt capability Application oriented characterization 100% avalanche tested Application oriented characterization DPAK 3 1 Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is intended for any applicat.

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STD26NF10 N-channel 100V - 0.033Ω - 25A - DPAK Low gate charge STripFET™ II Power MOSFET Features Type STD26NF10 ■ ■ ■ ■ VDSS 100V RDS(on) < 0.038Ω ID 25A Exceptional dv/dt capability Application oriented characterization 100% avalanche tested Application oriented characterization DPAK 3 1 Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is intended for any application with low gate charge drive requirements. Internal schematic diagram Applications ■ Switching application – Automotive Order code Part number STD26NF10 Marking D26NF10 Package DPAK Packaging Tape & reel April 2007 Rev 1 1/13 www.st.com 13 www.DataSheet.in Contents STD26NF10 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 www.DataSheet.in STD26NF10 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID(1) ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Value 100 100 ± 20 25 21 100 100 0.67 13 480 -55 to 175 Max. operating junction temperature Unit V V V A A A W W/°C V/ns mJ °C Ptot dv/dt(3) EAS (4) Peak diode recovery avalanche energy Single pulse avalanche energy Storage temperature Tstg Tj 1. Current limited by package 2. Pulse width limited by safe operating area. 3. ISD ≤35A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX 4. Starting Tj = 25 °C, ID = 12.5A VDD = 50V Table 2. Rthj-case Rthj-amb TJ Thermal data Thermal resistance junction-case max Thermal resistance junction-to ambient max Maximum lead temperature for soldering purpose 1.5 100 300 °C/W °C/W °C 3/13 www.DataSheet.in Electrical characteristics STD26NF10 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250µA, VGS =0 VDS = Max rating VDS = Max rating, TC = 125°C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10V, ID = 12.5A 2 3 0.033 Min. 100 1 10 ±100.


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