N-Channel MOSFET
FDP047N08 — N-Channel PowerTrench® MOSFET
FDP047N08
N-Channel PowerTrench® MOSFET
75 V, 164 A, 4.7 mΩ
November 2013
F...
Description
FDP047N08 — N-Channel PowerTrench® MOSFET
FDP047N08
N-Channel PowerTrench® MOSFET
75 V, 164 A, 4.7 mΩ
November 2013
Features
RDS(on) = 3.8 mΩ (Typ.) @ VGS = 10 V, ID = 80 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handling Capability RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
FDP047N08
VDSS VGSS
ID
IDM EAS dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 1) (Note 2) (Note 3)
75 ±20 164* 116* 656 670 6.0 268 1.79
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175 300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, J...
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