BLF872

BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efficiency ηD = 43 % x Third order intermodulation distortion IMD3 = −28 dBc s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Average output power PL(AV) = 70 W x Gain Gp = 15 dB x Drain efficiency ηD = 30 % x Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency) s Advanced flange material for optimum thermal behavior and reliability s Excellent ruggedness s High power gain s Designed for broadband operation (UHF band) s Excellent reliability s Internal input and output matching for high gain and optimum broadband operation s Source on underside eliminates DC isolators, reducing common-mode inductance s Easy power ...