BLF871; BLF871S
UHF power LDMOS transistor
Rev. 04 — 19 November 2009
Product data sheet
1. Product profile
1.1 Gener...
BLF871; BLF871S
UHF power LDMOS
transistor
Rev. 04 — 19 November 2009
Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power
transistor for broadcast transmitter applications and industrial applications. The
transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1. Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test circuit.
Mode of operation f
PL PL(PEP) PL(AV) Gp
ηD IMD3
(MHz)
(W) (W)
(W) (dB) (%) (dBc)
CW, class AB
860
100 -
- 21 60 -
2-tone, class AB
f1 = 860; f2 = 860.1 - 100
-
21 47 −35
DVB-T (8k OFDM) 858
--
24 22 33 −34[1]
PAR (dB) 8.3[2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion = −35 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 2...